FDI025N06 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 60V, 265A, 2.5mΩ

June 2008
FDI025N06
N-Channel PowerTrench^® MOSFET
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60V, 265A, 2.5mΩ
Features
• R_DS(on) = 1.9mΩ ( Typ.) @ V_GS = 10V, I_D = 75A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R_DS(on)
• High power and current handling capability
• RoHS compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
D
GDS
TO-262
FDI Series
G
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
Parameter
Ratings
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (T_C = 25^oC)
-Continuous (T_C = 100^oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
(Note 1)
(Note 2)
(Note 3)
60
±20
265*
190*
1060
2531
3.5
395
2.6
T_J, T_STG
Operating and Storage Temperature Range
-55 to +175
T_L
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
300
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
Ratings
0.38
0.5
62.5
Units
V
V
A
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2008 Fairchild Semiconductor Corporation
1
FDI025N06 Rev. A
www.fairchildsemi.com