FDH700 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Information Only Data Sheet

FDH700
ULTRA FAST DIODE
DISCRETE POWER AND SIGNAL
TECHNOLOGIES
Information Only Data Sheet
FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY
Absolute Maximum Ratings (note 1) TA = 25^OC unless otherwise noted
Parameter
Value
Units
Storage Temperature
-65 to +200
Maximum Junction Temperature
-65 to +175
Total Power Dissipation at 25^OC
250
Derate above 25^OC
1.67
Working Inverse Voltage
20
DC Forward Current
150
Note 1: These ratings are limiting values above which the serviceability of any semiconductor device may be impaired
0.500 Minimum
12.70 Typ 1.000
0.022 (0.558) Diameter
0.018 (0.458) Typ 20 mils
CATHODE
BAND
LOGO
FD
H7
00
0.200 (5.08)
0.120 (3.05)
0.090 (2.28) Diameter
0.060 (1.53)
O_C
O_C
mW
mW/^OC
V
mA
Electrical Characteristics TA = 25^OC unless otherwise noted
SYM
B_V
I_R
CHARACTERISTICS
Breakdown Voltage
Reverse Leakage
V_F Forward Voltage
MIN MAX UNITS
TEST CONDITIONS
30
50
50
420 500
520 610
640 740
760 900
810 990
0.89 1.25
V
I_R = 5.0 uA
nA
V_R = 20 V
uA
V_R = 20 V T_A = 150^OC
mV I_F = 10 uA
mV I_F = 100 uA
mV I_F = 1.0 mA
mV I_F = 10 mA
mV I_F = 20 mA
V
I_F = 50 mA
T_RR Reverse Recovery Time
C_T Diode Capacitance
900 ps
1.5
pF
I_F= I_R = 10 mA I_RR = 1.0 mA
R_Loop = 100 Ohm
V_R = 0 V, f = 1.0 MHz
© 1999 Fairchild Semiconductor Corporation
FDH700 - Rev. A