FDH50N50 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

FDH50N50 / FDA50N50
500V N-Channel MOSFET
Features
• 48A, 500V, R_DS(on) = 0.105Ω @V_GS = 10 V
• Low gate charge ( typical 105 nC)
• Low C_rss ( typical 45 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
UniFET^TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
GD _S
TO-247
FDH Series
G DS
TO-3P
FDA Series
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Absolute Maximum Ratings
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
FDH50N50/FDA50N50
500
48
30.8
192
±20
1868
48
62.5
4.5
625
5
-55 to +150
300
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Min.
--
0.24
--
Max.
0.2
--
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
1
FDH50N50 / FDA50N50 Rev. A
www.fairchildsemi.com