FDH400TR Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – High Voltage General Purpose Diode

April 2013
FDH 400 / FDLL 400
High Voltage General Purpose Diode
Cathode Band
DO-35
Cathode is denoted with a black band
SOD80
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
LL-34 COLOR BAND MARKING
DEVICE
FDLL400
1ST BAND
BLACK
-1st band denotes cathode terminal
and has wider width
Absolute Maximum Ratings⁽¹⁾
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T_A = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
W_IV Working Inverse Voltage
I_O Average Rectified Forward Current
I_F
DC Forward Current
i_f
Recurrent Peak Forward Current
I_FSM Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 s
Pulse Width = 1.0 μs
150
V
200
mA
500
mA
600
mA
1.0
A
4.0
A
T_STG Storage Temperature Range
-65 to +200
°C
T_J Operating Junction Temperature
175
°C
Note:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
These ratings are bansed on a maximum junction temperature of 200°C.
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
Thermal Characteristics
Values are at T_A = 25°C unless otherwise noted.
Symbol
Parameter
P_D
R_θJA
Power Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max.
FDH / FDLL 400
500
3.33
300
Units
mW
mW/°C
°C/W
© 1997 Fairchild Semiconductor Corporation
FDH 400 / FDLL 400 Rev. 1.1.0
1
www.fairchildsemi.com