FDH3595 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – High Conductance Low Leakage Diode

FDH3595
Discrete POWER & Signal
Technologies
DO-35
High Conductance Low Leakage Diode
Sourced from Process 1M. See MMBD1501-1505 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
W _IV
I_O
I_F
i_f
i_f(surge)
T_stg
T_J
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Pulse width = 1.0 microsecond
Storage Temperature Range
Operating Junction Temperature
125
200
500
600
1.0
4.0
-65 to +175
175
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 200 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
P_D
Total Device Dissipation
Derate above 25°C
Rθ_JA
Thermal Resistance, Junction to Ambient
Max
MMBD7000*
500
3.33
300
Units
V
mA
mA
mA
A
A
°C
°C
Units
mW
mW /°C
°C/W
ã 1997 Fairchild Semiconductor Corporation