FDH210N08 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Motor Drives and Uninterruptible Power Supplies

FDH210N08
N-Channel UniFET^TM MOSFET
75 V, 210 A, 5.5 mΩ
Features
• R_DS(on) = 4.65 mΩ (Typ.) @ V_GS = 10 V, I_D = 125 A
• Low Gate Charge (Typ. 232 nC)
• Low C_rss (Typ. 262 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
December 2013
Description
UniFET^TM MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
G
D
S
TO-247
Absolute Maximum Ratings T_C = 25°C unless otherwise noted.
Symbol
Parameter
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
Drain Current
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T_C = 25^oC)
- Derate Above 25^oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
T_J, T_STG
T_L
Operating and Storage Temperature Range
MaximumLead Temperature for Soldering,
1/8 from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
©2007 Fairchild Semiconductor Corporation
1
FDH210N08 Rev. C0
S
FDH210N08
75
210
132
840
± 20
9375
210
46.2
4.5
462
3.7
-55 to +175
300
FDH210N08
0.27
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
o_C/W
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