FDH055N15A Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 150V, 167A, 5.9m

April 2011
FDH055N15A
N-Channel PowerTrench^® MOSFET
150V, 167A, 5.9mΩ
Features
• R_DS(on) = 4.8mΩ ( Typ.)@ V_GS = 10V, I_D = 120A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
R_DS(on)
• High Power and Current Handling Capability
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semi-
conductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Converters
• Synchronous Rectification for Server/Telecom PSU
• Battery Charger
• AC motor drives and Uninterruptible Power Supplies
• Off-line UPS
D
TO-220
GDS _{G D S}
TO-247
G
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
dv/dt
P_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous (T_C = 25^oC, Silicon Limited)
- Continuous (T_C = 100^oC, Silicon Limited)
- Continuous (TC = 25^oC, Package Limited)
Drain Current
- Pulsed
(Note 1)
Single Pulsed Avalanche Energy
(Note 2,6)
Peak Diode Recovery dv/dt
Power Dissipation
(T_C = 25^oC)
- Derate above 25^oC
(Note 3)
Ratings
150
±20
167*
118
156
668
835
6.0
429
2.86
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +175
300
*Calculated continuous current based on maximum allowable junction temperature, Package limitation current is 156A.
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heat Sink (Typical)
Thermal Resistance, Junction to Ambient
Ratings
0.35
0.24
40
Units
V
V
A
A
mJ
V/ns
W
W/^oC
o_C
o_C
Units
o_C/W
©2011 Fairchild Semiconductor Corporation
1
FDH055N15A Rev. A4
www.fairchildsemi.com