FDH047AN08A0 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ

June 2004
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0
N-Channel PowerTrench^® MOSFET
75V, 80A, 4.7mΩ
Features
• r_DS(ON) = 4.0mΩ (Typ.), V_GS = 10V, I_D = 80A
• Q_g(tot) = 92nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low Q_RR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82684
Applications
• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
SOURCE
DRAIN
GATE
TO-220AB
FDP SERIES
DRAIN _TO-262AB
(FLANGE) _{FDI SERIES}
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C < 144^oC, V_GS = 10V)
Continuous (T_C = 25^oC, V_GS = 10V, with R_θJA = 62^oC/W)
Pulsed
E_AS
Single Pulse Avalanche Energy (Note 1)
Power dissipation
P_D
Derate above 25^oC
T_J, T_STG Operating and Storage Temperature
Thermal Characteristics
R_θJC
R_θJA
R_θJA
Thermal Resistance Junction to Case TO-220, TO-262, TO-247
Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)
Thermal Resistance Junction to Ambient TO-247 (Note 2)
SOURCE
DRAIN
GATE
DRAIN G
(FLANGE)
TO-247
FDH SERIES
Ratings
75
±20
80
15
Figure 4
475
310
2.0
-55 to 175
0.48
62
30
D
S
Units
V
V
A
A
A
mJ
W
W/^oC
o_C
o_C/W
o_C/W
o_C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2004 Fairchild Semiconductor Corporation
FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 Rev. C