FDH038AN08A1 Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

February 2003
FDH038AN08A1
N-Channel PowerTrench^® MOSFET
75V, 80A, 3.8mΩ
Features
• r_DS(ON) = 3.5mΩ (Typ.), V_GS = 10V, I_D = 80A
• Q_g(tot) = 125nC (Typ.), V_GS = 10V
• Internal Gate Resistor, Rg = 20Ω (Typ.)
• Low Miller Charge
• Low Q_RR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82690
SOURCE
DRAIN
GATE
Applications
• 42V Automotive Load Control
• Starter / Alternator Systems
• Electronic Power Steering Systems
• Electronic Valve Train Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V systems
D
G
TO-247
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C < 158^oC, V_GS = 10V)
Continuous (T_A = 25^oC, V_GS = 10V, with R_θJA = 30^oC/W)
Pulsed
E_AS
Single Pulse Avalanche Energy (Note 1)
Power dissipation
P_D
Derate above 25^oC
T_J, T_STG Operating and Storage Temperature
Thermal Characteristics
R_θJC
R_θJA
Thermal Resistance Junction to Case TO-247
Thermal Resistance Junction to Ambient TO-247
S
Ratings
75
±20
80
22
Figure 4
1.17
450
3.0
-55 to 175
0.33
30
Units
V
V
A
A
A
J
W
W/^oC
o_C
o_C/W
o_C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2003 Fairchild Semiconductor Corporation
FDH038AN08A1 Rev A