FDG6342L Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Integrated Load Switch

FDG6342L
Integrated Load Switch
September 2007
tm
Features
„ Max r_DS(on) = 150mΩ at V_GS = 4.5V, I_D = –1.5A
„ Max r_DS(on) = 195mΩ at V_GS = 2.5V, I_D = –1.3A
„ Max r_DS(on) = 280mΩ at V_GS = 1.8V, I_D = –1.1A
„ Max r_DS(on) = 480mΩ at V_GS = 1.5V, I_D = –0.9A
„ Control MOSFET (Q1) includes Zener protection for ESD
ruggedness ( >4KV Human body model)
„ High performance trench technology for extremely low r_DS(on)
„ Compact industry standard SC70-6 surface mount package
„ RoHS Compliant
General Description
This device is particularly suited for compact power
management in portable electronic equipment where 1.5V to 8V
input and 1.5A output current capability are needed. This load
switch integrates a small N-Channel power MOSFET (Q1) that
drives a large P-Channel power MOSFET (Q2) in one tiny
SC70-6 package.
Applications
„ Power management
„ Load switch
Q2
Vin,R1 ⁴
　
ON/OFF 5
3 Vout,C1
Q1
2 Vout,C1
Equivalent Circuit
IN
V_DROP
OUT
Pin 1
SC70-6
R1,C1 ⁶
1 R2
See Application Circuit
ON/OFF
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_IN
V_ON/OFF
I_Load
P_D
Parameter
Gate to Source Voltage (Q2)
Gate to Source Voltage (Q1)
Load Current -Continuous
-Pulsed
Power Dissipation for Single Operation
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 2)
(Note 2)
(Note 1a)
(Note 1b)
Ratings
±8
–0.5 to 8
–1.5
–6
0.36
0.3
–55 to +150
Units
V
V
A
W
°C
R_θJA
Thermal Resistance, Junction to Ambient Single operation
(Note 1a)
350
R_θJA
Thermal Resistance, Junction to Ambient Single operation
(Note 1b)
415
Package Marking and Ordering Information
°C/W
Device Marking
.42
Device
FDG6342L
Package
SC70-6
Reel Size
7’’
Tape Width
8mm
Quantity
3000units
©2007 Fairchild Semiconductor Corporation
1
FDG6342L Rev.B1
www.fairchildsemi.com