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FDG6332C_F085 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 20V N & P-Channel PowerTrench®MOSFETs | |||
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March 2009
FDG6332C_F085
20V N & P-Channel PowerTrench® MOSFETs
Features
General Description
⢠Q1 0.7 A, 20V.
RDS(ON) = 300 m⦠@ VGS = 4.5 V
RDS(ON) = 400 m⦠@ VGS = 2.5 V
⢠Q2 â0.6 A, â20V.
RDS(ON) = 420 m⦠@ VGS = â4.5 V
RDS(ON) = 630 m⦠@ VGS = â2.5 V
⢠Low gate charge
⢠High performance trench technology for extremely
low RDS(ON)
⢠SC70-6 package: small footprint (51% smaller than
SSOT-6); low profile (1mm thick)
⢠Qualified to AEC Q101
⢠RoHS Compliant
The N & P-Channel MOSFETs are produced using
Fairchild Semiconductorâs advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
TSSOP-8 and SSOP-6 packages are impractical.
Applications
⢠DC/DC converter
⢠Load switch
⢠LCD display inverter
S
G
D
Pin 1
D
G
S
SC70-6
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
(Note 1)
â Pulsed
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.32
FDG6332C_F085
7ââ
1
6
2
5
3
4
Complementary
Q1
Q2
20
â20
±12
±12
0.7
â0.6
2.1
â2
0.3
â55 to +150
Units
V
V
A
W
°C
415
°C/W
Tape width
8mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDG6332C_F085 Rev C2 (W)
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