FDG6331L Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Integrated Load Switch

April 2001
FDG6331L
Integrated Load Switch
General Description
This device is particularly suited for compact power
management in portable electronic equipment where
2.5V to 8V input and 0.8A output current capability are
needed. This load switch integrates a small N-Channel
power MOSFET (Q1) that drives a large P-Channel
power MOSFET (Q2) in one tiny SC70-6 package.
Applications
• Power management
• Load switch
Features
• –0.8 A, –8 V.
RDS(ON) = 260 mΩ @ VGS = –4.5 V
RDS(ON) = 330 mΩ @ VGS = –2.5 V
RDS(ON) = 450 mΩ @ VGS = –1.8 V
• Control MOSFET (Q1) includes Zener protection for
ESD ruggedness (>6KV Human body model)
• High performance trench technology for extremely
low RDS(ON)
• Compact industry standard SC70-6 surface mount
package
Pin 1
SC70-6
Vin,R1 ₄
ON/OFF ₅
R1,C1 ₆
Q2
3 ^Vout,C1
2 ^Vout,C1
Q1
1 ^R2
See Application Circuit
Equivalent Circuit
IN
+ _{V DROP} –
OUT
ON/OFF
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VIN
VON/OFF
ILoad
Parameter
Gate-Source Voltage (Q2)
Gate-Source Voltage (Q1)
Load Current – Continuous
– Pulsed
(Note 2)
(Note 2)
PD
TJ, TSTG
Maximum Power Dissipation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.31
FDG6331L
7’’
Ratings
±8
–0.5 to 8
–0.8
–2.4
0.3
–55 to +150
415
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDG6331L Rev B(W)