FDG6323L Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Integrated Load Switch

March 1999
FDG6323L
Integrated Load Switch
General Description
This device is particularly suited for compact
power management in portable electronic
equipment where 2.5V to 8V input and 0.6A
output current capability are needed. This load
switch integrates a small N-Channel power
MOSFET (Q1) which drives a large P-Channel
power MOSFET (Q2) in one tiny SC70-6
package.
Features
V_DROP=0.2V @ V_IN=5V, I_L=0.36A. R_(ON) = 0.55Ω
V_DROP=0.2V @ V_IN=2.5V, I_L=0.27A. R_(ON) = 0.75Ω.
Very small package outline SC70-6.
Control MOSFET (Q1) includes Zener protection for ESD
ruggedness (>6KV Human Body Model).
High density cell design for extremely low
on-resistance.
Compact industry standard SC70-6 surface mount package.
SC70-6
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
.23
pin 1
SC70-6
4 V IN , R1
5 ^VON/OFF
6 R1 , C1
Q2
Q1
3 VOUT , C1
2 VOUT , C1
1 R2
See Application Circuit
EQUIVALENT APPLICATION
IN
+V^DROP -
OUT
ON/OFF
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol Parameter
V_IN
V_ON/OFF
I_L
Input Voltage Range
On/Off Voltage Range
Load Current
- Continuous (Note 1)
- Pulsed
(Note 1 & 3)
P_D
T_J,T_STG
ESD
Maximum Power Dissipation
(Note 2)
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D Human Body
Model (100pf/1500Ohm)
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 2)
FDG6323L
2.5 - 8
1.5 - 8
0.6
1.8
0.3
-55 to 150
6
415
Units
V
V
A
W
°C
kV
°C/W
© 1999 Fairchild Semiconductor Corporation
FDG6323L Rev.C