FDG6322C Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – Dual N & P Channel Digital FET

February 1998
FDG6322C
Dual N & P Channel Digital FET
General Description
These dual N & P-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. This device has been designed
especially for low voltage applications as a replacement for
bipolar digital transistors and small signal MOSFETs. Since
bias resistors are not required, this dual digital FET can
replace several different digital transistors, with different bias
resistor values.
Features
N-Ch 0.22 A, 25 V, R_DS(ON) = 4.0 Ω @ V_GS= 4.5 V,
R_DS(ON) = 5.0 Ω @ V_GS= 2.7 V.
P-Ch -0.41 A,-25V, R_DS(ON) = 1.1 Ω @ V_GS= -4.5V,
R_DS(ON) = 1.5 Ω @ V_GS= -2.7V.
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (V_GS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
SC70-6
SOT-23
SuperSOT^TM-6
SOT-8
SO-8
SOIC-14
S2
G2
D1
pin 1
SC70-6
Mark: .22
D2
G1
S1
1
6
Q1
2
5
Q2
3
4
Absolute Maximum Ratings T_A = 25^oC unless other wise noted
Symbol Parameter
N-Channel
V_DSS
Drain-Source Voltage
25
V_GSS
Gate-Source Voltage
8
I_D
Drain Current - Continuous
0.22
- Pulsed
0.65
P_D
T_J,T_STG
ESD
Maximum Power Dissipation
(Note 1)
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note1)
0.3
-55 to 150
6
415
P-Channel
-25
-8
-0.41
-1.2
© 1998 Fairchild Semiconductor Corporation
Units
V
V
A
W
°C
kV
°C/W
FDG6322C Rev.F