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FDG6317NZ Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – Dual 20v N-Channel PowerTrench MOSFET | |||
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January 2004
FDG6317NZ
Dual 20v N-Channel PowerTrench® MOSFET
General Description
This dual N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low RDS(ON) and gate charge (QG) in a small package.
Applications
⢠DC/DC converter
⢠Power management
⢠Loadswitch
Features
⢠0.7 A, 20 V.
RDS(ON) = 400 m⦠@ VGS = 4.5 V
RDS(ON) = 550 m⦠@ VGS = 2.5 V
⢠ESD protection diode (note 3)
⢠Low gate charge
⢠High performance trench technology for extremely
low RDS(ON)
⢠Compact industry standard SC70-6 surface mount
package
S
G
D
Pin 1
D
G
S
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
(Note 1)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.67
FDG6317NZ
7ââ
©2004 Fairchild Semiconductor Corporation
Ratings
20
± 12
0.7
2.1
0.3
â55 to +150
415
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
FDG6317NZ Rev B (W)
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