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FDG6308P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET | |||
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October 2000
PRELIMINARY
FDG6308P
P-Channel 1.8V Specified PowerTrenchï MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchildâs advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
⢠Battery management
⢠Load switch
Features
⢠â0.6 A, â20 V.
RDS(ON) = 0.40 ⦠@ VGS = â4.5 V
RDS(ON) = 0.55 ⦠@ VGS = â2.5 V
RDS(ON) = 0.80 ⦠@ VGS = â1.8 V
⢠Low gate charge
⢠High performance trench technology for extremely
low RDS(ON)
⢠Compact industry standard SC70-6 surface mount
package
S
G
D
S 1 or 4
Pin 1
D
G
S
G 2 or 5
D 3 or 6
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
6 or 3 D
5 or 2 G
4 or 1 S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
(Note 1)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.08
FDG6308P
7ââ
Ratings
â20
±8
â0.6
â1.8
0.3
â55 to +150
415
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
ï2000 Fairchild Semiconductor Corporation
FDG6308P Rev B(W)
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