FDG6301N Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Dual N-Channel, Digital FET

July 1999
FDG6301N
Dual N-Channel, Digital FET
General Description
These dual N-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. This device has been
designed especially for low voltage applications as a
replacement for bipolar digital transistors and small
signal MOSFETs.
Features
25 V, 0.22 A continuous, 0.65 A peak.
R_DS(ON) = 4 Ω @ V_GS= 4.5 V,
R_DS(ON) = 5 Ω @ V_GS= 2.7 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (V_GS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
Compact industry standard SC70-6 surface mount
package.
SC70-6
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
S2
G2
D1 _.01
SC70-6
D2
S1 ^G1
1 or 4 *
2 or 5
3 or 6
6 or 3
5 or 2
4 or 1 *
*The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Units inside the carrier can be of either orientation and will not affect the functionality of the device.
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain/Output Current - Continuous
- Pulsed
P_D
Maximum Power Dissipation
(Note 1)
T_J,T_STG Operating and Storage Temperature Range
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model(100 pF / 1500 Ω)
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient
FDG6301N
25
8
0.22
0.65
0.3
-55 to 150
6.0
415
Units
V
V
A
W
°C
kV
°C/W
FDG6301N Rev.E1