FDG410NZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Single N-Channel PowerTrench® MOSFET 20 V, 2.2 A, 70 mΩ

FDG410NZ
Single N-Channel PowerTrench^® MOSFET
20 V, 2.2 A, 70 mΩ
March 2009
Features
General Description
„ Max r_DS(on) = 70 mΩ at V_GS = 4.5 V, I_D = 2.2 A
„ Max r_DS(on) = 77 mΩ at V_GS = 2.5 V, I_D = 2.0 A
„ Max r_DS(on) = 87 mΩ at V_GS = 1.8 V, I_D = 1.8 A
„ Max r_DS(on) = 115 mΩ at V_GS = 1.5 V, I_D = 1.5 A
„ HBM ESD protection level > 2 kV (Note 3)
„ High performance trench technology for extremely low r_DS(on)
„ High power and current handling capability
„ Fast switching speed
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has
been optimized use in small switching regulaters, providing an
extremely low r_DS(on) and gate charge (Q_g) in a small package.
Applications
„ DC/DC converter
„ Power management
„ Load switch
„ Low gate charge
„ RoHS Compliant
DS
D
G
D
D
D1
D2
G3
6D
5D
4S
SC70-6
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
2.2
6.0
0.42
0.38
-55 to +150
Units
V
V
A
W
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
.41
Device
FDG410NZ
Package
SC70-6
(Note 1a)
300
(Note 1b)
333
°C/W
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
1
FDG410NZ Rev.B
www.fairchildsemi.com