FDG361N Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – N-Channel 100V Specified PowerTrenchMOSFET

August 2001
FDG361N
N-Channel 100V Specified PowerTrench^MOSFET
General Description
These N-Channel 100V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the bigger more expensive SO-8
and TSSOP-8 packages are impractical.
Applications
• Load switch
• Battery protection
• Power management
Features
• 0.6 A, 100 V. RDS(ON)= 500 mΩ @ VGS = 10 V
RDS(ON)= 550 mΩ @ VGS = 6.0 V
• Low gate charge (3.7nC typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
S
D
D
Pin 1
SC70-6
G
D
D
1
6
2
5
3
4
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.61
FDG361N
7’’
Ratings
100
±20
0.6
2.0
0.42
0.38
−55 to +150
300
333
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDG361N Rev C(W)