FDG329N Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – 20V N-Channel PowerTrench MOSFET

October 2001
FDG329N
20V N-Channel PowerTrench^® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low RDS(ON) and gate charge (QG) in a small package.
Applications
• DC/DC converter
• Power management
• Load switch
Features
• 1.5 A, 20 V.
RDS(ON) = 90 mΩ @ VGS = 4.5 V.
RDS(ON) = 115 mΩ @ VGS = 2.5 V
• Fast switching speed
• Low gate charge (3.3 nC typical)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability.
S
D
1
D
2
G
Pin 1
SC70-6
D
D
3
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.29
FDG329N
7’’
Ratings
20
± 12
1.5
6
0.42
0.38
-55 to +150
300
333
Tape width
8mm
6
5
4
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
©2001 Fairchild Semiconductor International
FDG329N Rev C (W)