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FDG328P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench MOSFET | |||
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October 2000
FDG328P
P-Channel 2.5V Specified PowerTrenchï MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductorâs
advanced PowerTrench process. It has been optimized
for power management applications for a wide range of
gate drive voltages (2.5V â 12V).
Applications
⢠Load switch
⢠Power management
⢠DC/DC converter
Features
⢠â1.5 A, â20 V. RDS(ON) = 0.145 ⦠@ VGS = â4.5 V
RDS(ON) = 0.210 ⦠@ VGS = â2.5 V
⢠Low gate charge
⢠High performance trench technology for extremely
low RDS(ON)
⢠Compact industry standard SC70-6 surface mount
package
S
D
D
Pin 1
SC70-6
G
D
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.28
FDG328P
7ââ
1
6
2
5
3
4
Ratings
â20
± 12
â1.5
â6
0.75
0.48
-55 to +150
260
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
ï2000 Fairchild Semiconductor International
FDG328P Rev C(W)
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