FDG316P Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – P-Channel Logic Level PowerTrench MOSFET

December 2001
FDG316P
P-Channel Logic Level PowerTrench^ MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
• DC/DC converter
• Load switch
• Power Management
Features
• -1.6 A, -30 V. R_DS(ON) = 0.19 Ω @ V_GS = -10 V
R_DS(ON) = 0.30 Ω @ V_GS = -4.5 V.
• Low gate charge (3.5nC typical).
• High performance trench technology for extremely low
R_DS(ON).
• Compact industry standard SC70-6 surface mount
package.
S
D
D
SC70-6
G
D
D
1
6
2
5
3
4
Absolute Maxim um Ratings T = 25°C unless otherwise noted
A
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.36
FDG316P
7’’
Ratings
-30
±20
-1.6
-6
0.75
0.48
-55 to +150
260
Tape Width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2001 Fairchild Semiconductor Corporation
FDG316P Rev. D