FDG315N Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – N-Channel Logic Level PowerTrench MOSFET

July 2000
FDG315N
N-Channel Logic Level PowerTrench^ MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
• DC/DC converter
• Load switch
• Power Management
Features
• 2 A, 30 V. R_DS(ON) = 0.12 Ω @ V_GS = 10 V
R_DS(ON) = 0.16 Ω @ V_GS = 4.5 V.
• Low gate charge (2.1nC typical).
• High performance trench technology for extremely low
R.
DS(ON)
• Compact industry standard SC70-6 surface mount
package.
S
D
D
SC70-6
G
D
D
1
6
2
5
3
4
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
T_J, T_stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
Rθ_JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.15
FDG315N
7’’
Ratings
30
±₂₀
2
6
0.75
0.48
-55 to +150
260
Tape Width
8mm
Units
V
V
A
W
°_C
°_C/W
Quantity
3000 units
2000 Fairchild Semiconductor International
FDG315N Rev. C