FDG311N Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – N-Channel 2.5V Specified PowerTrench MOSFET

February 2000
FDG311N
N-Channel 2.5V Specified PowerTrench^ MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance. These devices are
well suited for portable electronics applications.
Applications
• Load switch
• Power management
• DC/DC converter
Features
• 1.9 A, 20 V. R_DS(ON) = 0.115 Ω @ V_GS = 4.5 V
R_DS(ON) = 0.150 Ω @ V_GS = 2.5 V.
• Low gate charge (3nC typical).
• High performance trench technology for extremely low
R_DS(ON).
• Compact industry standard SC70-6 surface mount
package.
S
D
D
SC70-6
G
D
D
1
6
2
5
3
4
Absolute Maximum Ratings T_A = 25 C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
TJ, Tstg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.11
FDG311N
7
Ratings
20
±8
1.9
6
0.75
0.48
-55 to +150
260
Tape Width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
2000 Fairchild Semiconductor Corporation
FDG311N Rev. D