FDFS6N754 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 4A, 56mOHM

Final Datasheet
August 2006
FDFS6N754
tm
Integrated N-Channel PowerTrench^® MOSFET and Schottky Diode
30V, 4A, 56mΩ
Features
„ Max r_DS(on) = 56mΩ at V_GS = 0V, I_D = 4A
Max r_DS(on) = 75mΩ at V_GS = 4.5V, I_D = 3.5A
„ V_F < 0.45V @ 2A
V_F < 0.28V @ 100mA
„ Schottky and MOSFET incorporated into single power
surface mount SO-8 package
„ Electrically independent Schottky and MOSFET pinout
for design flexibility
„ Low Gate Charge (Qg = 4nC)
„ Low Miller Charge
General Description
The FDFS6N754 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in an SO-
8 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-state
resistance. The independently connected Schottky diode
allows its use in a variety of DC/DC converter topologies.
Applications
„ DC/DC converters
D
D
C
C
A1
A2
8C
7C
SO-8
Pin 1
G
S
A
A
S3
G4
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Parameter
(Note 1a)
Power Dissipation for Dual Operation
P_D
Power Dissipation for Single Operation
(Note 1a)
V_RRM
I_O
T_J, T_STG
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Operating and Storage Temperature
(Note 1a)
6D
5D
Ratings
30
±20
4
20
2
1.6
20
2
-55 to 150
Units
V
V
A
W
V
A
°C
Thermal Characteristics
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
78
(Note 1)
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDFS6N754
Device
FDFS6N754
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDFS6N754 Rev. A
www.fairchildsemi.com