FDFS6N548 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Integrated N-Channel PowerTrench MOSFET and Schottky Diode 30V, 7A, 23mohm

January 2007
FDFS6N548
tm
Integrated N-Channel PowerTrench^® MOSFET and Schottky Diode
30V, 7A, 23mΩ
Features
General Description
„ Max r_DS(on) = 23mΩ at V_GS = 10V, I_D = 7A
„ Max r_DS(on) = 30mΩ at V_GS = 4.5V, I_D = 6A
„ V_F < 0.45V @ 2A
V_F < 0.28V @ 100mA
„ Schottky and MOSFET incorporated into single power surface
mount SO-8 package
„ Electrically independent Schottky and MOSFET pinout for
design flexibility
„ Low Miller Charge
The FDFS6N548 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very low
forward voltage drop Schottky barrier rectifier in an SO-8
package.
This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance. The
independently connected Schottky diode allows its use in a
variety of DC/DC converter topologies.
Application
„ DC/DC Conversion
D
D
C
C
SO-8
Pin 1
G
S
A
A
A1
A2
S3
G4
8C
7C
6D
5D
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
E_AS
V_RRM
I_O
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Drain-Source Avalanche Energy
Schotty Repetitive Peak Reverse Voltage
Schotty Average Forward Current
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
7
30
2
1.6
12
20
2
-55 to +150
Units
V
V
A
W
mJ
V
A
°C
R_θJA
R_θJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
(Note 1a)
78
(Note 1)
40
°C/W
Device Marking
FDFS6N548
Device
FDFS6N548
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2007 Fairchild Semiconductor Corporation
1
FDFS6N548 Rev.B
www.fairchildsemi.com