FDFS6N303_03 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – N-Channel MOSFET with Schottky Diode

October 2003
FDFS6N303
N-Channel MOSFET with Schottky Diode
General Description
Features
The FDFS6N303 incorporates a high cell density MOSFET
and low forward drop (0.35V) Schottky diode into a single
surface mount power package. The MOSFET and Schottky
diode are isolated inside the package. The general pur-
pose pinout has been chosen to maximize flexibility and
ease of use. This product is particularly suited for switch-
ing applications such as DC/DC buck, boost, synchronous,
and non-synchronous converters where the MOSFET is driven
as low as 4.5V and fast switching, high efficiency and
small PCB footprint is desirable.
6 A, 30 V. R_DS(ON) = 0.035 Ω @ V_GS = 10 V.
R_DS(ON) = 0.055 Ω @ V_GS = 4.5 V.
V_F < 0.28 V @ 0.1 A
V_F < 0.42 V @ 3 A
V_F < 0.50 V @ 6 A.
Schottky and MOSFET incorporated into single power
surface mount SO-8 package.
General purpose pinout for design flexibility.
Ideal for DC/DC converter applications.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
D
D
C
C
FD6NF3S03
SO-8
G
S
pin 1
A
A
A1
A2
S3
G4
MOSFET Maximum Ratings T_A = 25^oC unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1a)
P_D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
Schottky Diode Maximum Ratings
V_RRM
Repetitive Peak Reverse Voltage
I_O
Average Forward Current
T_A = 25^oC unless otherwise noted
(Note 1a)
FDFS6N303
30
±20
6
30
2
1.6
0.9
-55 to 150
30
2
8C
7C
6D
5D
Units
V
V
A
W
°C
V
A
© 2003 Fairchild Semiconductor Corporation
FDFS6N303 Rev. D3