FDFS6N303 Datasheet, PDF (1/5 Pages) Fairchild Semiconductor – N-Channel MOSFET with Schottky Diode

October 2001
FDFS6N303
N-Channel MOSFET with Schottky Diode
General Description
Features
Fairchild Semiconductor's FETKEY technology incorporates
a high cell density MOSFET and low forward drop (0.35V)
Schottky diode into a single surface mount power package.
The MOSFET and Schottky diode are isolated inside the
package. The general purpose pinout has been chosen to
maximize flexibility and ease of use. FETKEY products are
particularly suited for switching applications such as DC/DC
buck, boost, synchronous, and non-synchronous converters
where the MOSFET is driven as low as 4.5V and fast
switching, high efficiency and small PCB footprint is
desirable.
6 A, 30 V. R_DS(ON) = 0.035 Ω @ V_GS = 10 V.
R_DS(ON) = 0.050 Ω @ V_GS = 4.5 V.
V_F < 0.28 V @ 0.1 A
V_F < 0.42 V @ 3 A
V_F < 0.50 V @ 6 A.
Schottky and MOSFET incorporated into single power
surface mount SO-8 package.
General purpose pinout for design flexibility.
Ideal for DC/DC converter applications.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
D
D
C
C
FD6NF3S03
SO-8
G
S
pin 1
A
A
A1
A2
S3
G4
MOSFET Maximum Ratings T_A = 25^oC unless otherwise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current - Continuous
- Pulsed
(Note 1a)
P_D
Power Dissipation for Dual Operation
Power Dissipation for Single Operation (Note 1a)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
Schottky Diode Maximum Ratings
V_RRM
Repetitive Peak Reverse Voltage
I_O
Average Forward Current
T_A = 25^oC unless otherwise noted
(Note 1a)
FDFS6N303
30
±20
6
30
2
1.6
0.9
-55 to 150
30
2
8C
7C
6D
5D
Units
V
V
A
W
°C
V
A
© 2001 Fairchild Semiconductor Corporation
FDFS6N303 Rev. D1