FDFS2P753Z Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Integrated P-Channel PowerTrench® MOSFET and Schottky Diode

November 2006
FDFS2P753Z
Integrated P-Channel PowerTrench^® MOSFET and Schottky Diode
-30V, -3A, 115mΩ
Features
General Description
„ Max r_DS(on) = 115mΩ at V_GS = -10V, I_D = -3.0A
„ Max r_DS(on) = 180mΩ at V_GS = -4.5V, I_D = -1.5A
„ V_F < 500mV @ 1A
V_F < 580mV @ 2A
„ Schottky and MOSFET incorporated into single power surface
mount SO-8 package
„ Electrically independent Schottky and MOSFET pinout for
design flexibility
„ RoHS Compliant
The FDFS2P753Z combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very low
forward voltage drop Schottky barrier rectifier in an SO-8
package.
This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance. The
independently connected Schottky diode allows its use in a
variety of DC/DC converter topologies.
Application
„ DC - DC Conversion
D
D
C
C
SO-8
Pin 1
G
S
A
A
D5
D6
C7
C8
4G
3S
2A
1A
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
E_AS
V_RRM
I_O
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Single Pulse Avalanche Energy
Schotty Repetitive Peak Reverse Voltage
Schotty Average Forward Current
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 2)
(Note 1a)
Ratings
-30
±25
-3
-16
1.6
6
-20
-2
-55 to +150
Units
V
V
A
W
mJ
V
A
°C
R_θJA
R_θJC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Package Marking and Ordering Information
(Note 1a)
78
(Note 1)
40
°C/W
Device Marking
FDFS2P753Z
Device
FDFS2P753Z
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
1
FDFS2P753Z Rev.A
www.fairchildsemi.com