FDFS2P753AZ Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -30V, -3A, 115mΩ

July 2007
FDFS2P753AZ
tm
Integrated P-Channel PowerTrench^® MOSFET and Schottky Diode
-30V, -3A, 115mΩ
Features
General Description
„ Max r_DS(on) = 115mΩ at V_GS = -10V, I_D = -3.0A
„ Max r_DS(on) = 180mΩ at V_GS = -4.5V, I_D = -1.5A
„ V_F < 0.45V @ 2A
V_F < 0.28V @ 100mA
„ Schottky and MOSFET incorporated into single power surface
mount SO-8 package
„ Electrically independent Schottky and MOSFET pinout for
design flexibility
„ RoHS Compliant
The FDFS2P753AZ offers a single package solution for DC/DC
conversion. It combines an excellent Fairchild’s PowerTrench
MOSFET with a Schottky diode in an SO-8 package. The
MOSFET features a low on-state resistance and an optimized
gate charge to achieve fast switching. The independently
connected Schottky diode has a low forward voltage drop to
minimize power loss. This device is an Ideal DC-DC solution for
up to 3A peak load current.
Applications
„ DC - DC Conversion
D
D
C
C
Pin 1
G
S
A
A
SO-8
D5
D6
C7
C8
4G
3S
2A
1A
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
E_AS
V_RRM
I_O
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Single Pulse Avalanche Energy
T_C = 25°C
T_A = 25°C
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 2)
Ratings
-30
±25
-3
-16
3.1
1.6
6
30
2
-55 to +150
Units
V
V
A
W
mJ
V
A
°C
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
40
(Note 1a)
78
°C/W
Device Marking
FDFS2P753AZ
Device
FDFS2P753AZ
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500units
©2007 Fairchild Semiconductor Corporation
1
FDFS2P753AZ Rev.B
www.fairchildsemi.com