FDFS2P103A Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Integrated P-Channel PowerTrench MOSFET and Schottky Diode

August 2002
FDFS2P103A
Integrated P-Channel PowerTrench^ MOSFET and Schottky Diode
General Description
The FDFS2P103A combines the exceptional
performance of Fairchild's PowerTrench MOSFET
technology with a very low forward voltage drop
Schottky barrier rectifier in an SO-8 package.
This device is designed specifically as a single package
solution for DC to DC converters. It features a fast
switching, low gate charge MOSFET with very low on-
state resistance. The independently connected
Schottky diode allows its use in a variety of DC/DC
converter topologies.
Features
• –5.3 A, –30V RDS(ON) = 59 mΩ @ VGS = –10 V
RDS(ON) = 92 mΩ @ VGS = –4.5 V
• V_F < 0.35 V @ 1 A (TJ = 125°C)
V_F < 0.25 V @ 1 A (TJ = 25°C)
• Schottky and MOSFET incorporated into single
power surface mount SO-8 package
• Electrically independent Schottky and MOSFET
pinout for design flexibility
D
D
C
C
SO-8
Pin 1
G
S
A
A
A1
A²
S3
G4
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current – Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
VRRM
IO
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note 1a)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDFS2P103A
FDFS2P103A
13’’
Ratings
–30
±25
–5.3
–20
2
1.6
1
0.9
–55 to +150
30
1
Tape width
12mm
8C
7_C
6D
5D
Units
V
V
A
W
°C
V
A
Quantity
2500 units
2002 Fairchild Semiconductor Corporation
FDFS2P103A Rev C (W)