FDFMC2P120 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Integrated P-Channel PowerTrench MOSFET and Schottky Diode

July 2005
FDFMC2P120
Integrated P-Channel PowerTrench^® MOSFET and Schottky Diode
General Description
FDFMC2P120 combines the exceptional performance
of Fairchild's PowerTrench MOSFET technology with a
very low forward voltage drop Schottky barrier rectifier
in a MicroFET package.
This device is designed specifically as a single package
solution for Buck Boost. It features a fast switching, low
gate charge MOSFET with very low on-state resistance.
Applications
• Buck Boost
Features
• –2 A, –20 V
R_DS(ON) = 125 mΩ @ V_GS = –4.5 V
R_DS(ON) = 200 mΩ @ V_GS = –2.5 V
• Low Profile – 0.8mm maximum – in the new package
MicroFET 3x3 mm
PIN 1 2 3
NC ₁
TO BOTTOM
6^A
S₂
5^A
TOP
6
MLP 3x3
54
BOTTOM
S₃
4^G
Absolute Maximum Ratings T_A=25^oC unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
V_RRM
I_O
P_D
T_J, T_STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
(Note a)
Power Dissipation (Steady State)
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2P120
FDFMC2P120
7’’
Ratings
–20
±12
–3.5
–10
20
2
2.4
1.2
–55 to +150
60
145
Tape width
12mm
Units
V
V
A
V
A
W
°C
°C/W
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
FDFMC2P120 Rev.E (W)