FDFMA3P029Z Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Integrated P-Channel PowerTrench® MOSFET and Schottky Diode

January 2013
FDFMA3P029Z
Integrated P-Channel PowerTrench^® MOSFET and Schottky Diode
–30 V, –3.3 A, 87 mΩ
Features
General Description
MOSFET
„ Max r_DS(on) = 87 mΩ at V_GS = –10 V, I_D = –3.3 A
„ Max r_DS(on) = 152 mΩ at V_GS = –4.5 V, I_D = –2.3 A
„ HBM ESD protection level > 2 KV typical (Note 3)
Schottky
„ V_F < 0.37 V @ 500 mA
„ Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
„ RoHS Compliant
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features a MOSFET with very low
on-state resistance and an independently connected low forward
voltage schottky diode allows for minimum conduction losses.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
PIN 1
A NC D
C
D
A1
NC ²
6C
5G
C GS
Top
Bottom
MicroFET 2x2
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Parameter
T_J, T_STG
V_RRM
I_O
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Thermal Characteristics
D3
(Note 1a)
(Note 1a)
(Note 1b)
4S
Ratings
–30
±25
–3.3
-15
1.4
0.7
–55 to +150
20
2
Units
V
V
A
W
°C
V
A
R_θJA
R_θJA
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
86
(Note 1b)
173
(Note 1c)
86
(Note 1d)
173
°C/W
Device Marking
3P2
Device
FDFMA3P029Z
Package
MicroFET 2X2
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
1
FDFMA3P029Z Rev.C
www.fairchildsemi.com