FDFMA2P857 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3.0A, 120mohm

February 2007
FDFMA2P857
Integrated P-Channel PowerTrench^® MOSFET and Schottky Diode
–20V, –3.0A, 120mΩ
Features
General Description
MOSFET:
„ Max r_DS(on) = 120mΩ at V_GS = –4.5V, I_D = –3.0A
„ Max r_DS(on) = 160mΩ at V_GS = –2.5V, I_D = –2.5A
„ Max r_DS(on) = 240mΩ at V_GS = –1.8V, I_D = –1.0A
Schottky:
„ V_F < 0.54V @ 1A
„ Low profile - 0.8 mm maximum - in the new pack-
age MicroFET 2x2 mm
„ RoHS Compliant
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra-
portable applications. It features a MOSFET with low on-state
resistance and an independently connected low forward voltage
schottky diode for minimum conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for it’s physical size and is well suited to linear
mode applications.
Pin 1
A NC D
A1
6C
NC 2
5G
D3
4S
MicroFET 2x2
CG S
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
P_D
T_J, T_STG
V_RRM
I_O
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
–3
–6
1.4
0.7
–55 to +150
30
1
Units
V
V
A
W
°C
V
A
R_θJA
R_θJA
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
.857
Device
FDFMA2P857
Package
MicroFET 2x2
©2007 Fairchild Semiconductor Corporation
1
FDFMA2P857 Rev.B
(Note 1a)
86
(Note 1b)
173
(Note 1c)
86
(Note 1d)
140
°C/W
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
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