FDFMA2P853T Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Integrated P-Channel PowerTrench® MOSFET and Schottky Diode

December 2008
FDFMA2P853T
Integrated P-Channel PowerTrench^® MOSFET and Schottky Diode ^tm
–20 V, –3.0 A, 120 mΩ
Features
General Description
MOSFET:
„ Max r_DS(on) = 120 mΩ at V_GS = –4.5 V, I_D = –3.0 A
„ Max r_DS(on) = 160 mΩ at V_GS = –2.5 V, I_D = –2.5 A
„ Max r_DS(on) = 240 mΩ at V_GS = –1.8 V, I_D = –1.0 A
Schottky:
„ V_F < 0.46 V @ 500 mA
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other
ultra-portable applications. It features a MOSFET with low
on-state resistance and an independently connected low forward
voltage schottky diode for minimum conduction losses.
The MicroFET 2x2 Thin package offers exceptional thermal
performance for it’s physical size and is well suited to linear
mode applications.
„ Low profile - 0.55 mm maximum - in the new package
MicroFET 2x2 Thin
„ RoHS Compliant
„ Free from halogenated compounds and antimony
oxides
Pin 1
A NC D
A1
6C
NC 2
5G
D3
4S
MicroFET 2X2 Thin
C GS
MOSFET Maximum Ratings T_A = 25 °C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
V_RRM
I_O
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous T_A = 25 °C
-Pulsed
Power Dissipation
T_A = 25 °C
Power Dissipation
T_A = 25 °C
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–20
±8
–3.0
–6
1.4
0.7
–55 to +150
30
1
Units
V
V
A
W
°C
V
A
R_θJA
R_θJA
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
86
(Note 1b)
173
(Note 1c)
86
(Note 1d)
140
°C/W
Device Marking
53
Device
FDFMA2P853T
Package
MicroFET 2x2 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2008 Fairchild Semiconductor Corporation
1
FDFMA2P853T Rev.B1
www.fairchildsemi.com