FDFMA2P853 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Integrated P-Channel PowerTrench MOSFET and Schottky Diode

August 2005
FDFMA2P853
Integrated P-Channel PowerTrench^® MOSFET and Schottky Diode
General Description
This device is designed specifically as a single package
solution for the battery charge switch in cellular handset
and other ultra-portable applications. It features a MOSFET
with low on-state resistance and an independently
connected low forward voltage schottky diode for minimum
conduction losses.
The MicroFET 2x2 package offers exceptional thermal
performance for it's physical size and is well suited to linear
mode applications.
Features
MOSFET:
„ -3.0 A, -20V. R_DS(ON) = 120 mΩ @ V_GS = -4.5 V
R_DS(ON) = 160 mΩ @ V_GS = -2.5 V
R_DS(ON) = 240 mΩ @ V_GS = -1.8 V
„ Low Profile - 0.8 mm maximun - in the new package
MicroFET 2x2 mm
Schottky:
PIN
A
„ V_F < 0.46 V @ 500 mA
NC D
A¹
6C
C
D
NC 2
5G
D3
MicroFET _{C G S}
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
Parameter
MOSFET Drain-Source Voltage
MOSFET Gate-Source Voltage
Drain Current -Continuous
-Pulsed
(Note 1a)
V_RRM
I_O
P_D
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current
Power dissipation for Single Operation
Power dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
T_J, T_STG Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
R_θJA
R_θJA
R_θJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
Package Marking and Ordering Information
Device Marking
.853
Device
FDFMA2P853
Reel Size
7inch
Tape Width
8mm
4_S
Ratings
-20
±8
-2.2
-6
20
1
1.4
0.7
-55 to +150
Units
V
V
A
V
A
W
o_C
86
173
o_C/W
86
140
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
1
FDFMA2P853 Rev. C (W)