FDFMA2P029Z Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3.1A, 95mohm

December 2006
FDFMA2P029Z
Integrated P-Channel PowerTrench^® MOSFET and Schottky Diode
–20V, –3.1A, 95mΩ
Features
General Description
MOSFET
„ Max r_DS(on) = 95mΩ at V_GS = –4.5V, I_D = –3.1A
„ Max r_DS(on) = 141mΩ at V_GS = –2.5V, I_D = –2.5A
Schottky
„ V_F < 0.37V @ 500mA
„ Low profile - 0.8 mm maximum - in the new package
MicroFET 2x2 mm
„ RoHS Compliant
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra-
portable applications. It features a MOSFET with very low on-
state resistance and an independently connected low forward
voltage schottky diode allows for minimum conduction losses.
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and is well suited to linear mode
applications.
Pin 1
A NC D
A1
6C
NC ²
5G
D3
4S
MicroFET 2X2 ^{C G S}
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Parameter
T_J, T_STG
V_RRM
I_O
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
–20
±12
–3.1
-6
1.4
0.7
–55 to +150
20
2
Units
V
V
A
W
°C
V
A
R_θJA
R_θJA
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
86
(Note 1b)
173
(Note 1c)
86
(Note 1d)
140
°C/W
Device Marking
.P29
Device
FDFMA2P029Z
Package
MicroFET 2X2
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
©2006 Fairchild Semiconductor Corporation
1
FDFMA2P029Z Rev.B
www.fairchildsemi.com