FDFMA2N028Z_08 Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20V, 3.7A, 68mΩ

March 2008
FDFMA2N028Z
Integrated N-Channel PowerTrench^® MOSFET and Schottky Diode
20V, 3.7A, 68mΩ
Features
General Description
MOSFET
„ Max r_DS(on) = 68mΩ at V_GS = 4.5V, I_D = 3.7A
„ Max r_DS(on) = 86mΩ at V_GS = 2.5V, I_D = 3.3A
„ HBM ESD protection level > 2kV (Note 3)
Schottky
„ V_F < 0.37V @ 500mA
„ Low profile - 0.8 mm maximum - in the new package MicroFET
2x2 mm
„ RoHS Compliant
This device is designed specifically as a single package solution
for a boost topology in cellular handset and other ultra-portable
applications. It features a MOSFET with low on-state resistance,
and an independently connected schottky diode with low forward
voltage.
The MicroFET 2x2 package offers exceptional thermal
performance for its physical size and is well suited to switching
and linear mode applications.
Application
„ DC - DC Conversion
Pin 1
A NC D
A1
6C
NC 2
5G
D3
4S
CG S
MicroFET 2X2
MOSFET Maximum Ratings T_J = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
T_J, T_STG
V_RR
I_O
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±12
3.7
6
1.4
0.7
-55 to +150
20
2
Units
V
V
A
W
°C
V
A
R_θJA
R_θJA
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
86
(Note 1b)
173
(Note 1c)
86
(Note 1d)
140
°C/W
Device Marking
Device
.N28
FDFMA2N028Z
©2008 Fairchild Semiconductor Corporation
FDFMA2N028Z Rev.B1
Package
MicroFET 2X2
1
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
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