FDFM2P110_0508 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Integrated P-Channel PowerTrench® MOSFET and Schottky Diode

August 2005
FDFM2P110
Integrated P-Channel PowerTrench^® MOSFET and Schottky Diode
General Description
FDFM2P110 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in a
MicroFET package.
Applications
„ Buck Boost
Features
This device is designed specifically as a single package
solution for Buck Boost. It features a fast switching, low
gate charge MOSFET with very low on-state resistance.
„ -3.5 A, -20 V R_DS(ON) = 140mΩ @ V_GS = -4.5 V
R_DS(ON) = 200mΩ @ V_GS = -2.5 V
„ Low Profile - 0.8 mm maximun - in the new package
MicroFET 3x3 mm
PIN 1
A SG
A¹
6A
C/D
S2
5S
G3
4_D
TOP
MLP 3x3
AS D
BOTTOM
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
V_RRM
I_O
P_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
-Pulsed
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current
Power dissipation (Steady State)
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
T_J, T_STG Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
R_θJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
2P110
Device
FDFM2P110
Reel Size
7inch
Tape Width
12mm
©2005 Fairchild Semiconductor Corporation
1
Ratings
-20
±12
-3.5
-10
20
2
2
0.8
-55 to +150
60
145
Units
V
V
A
V
A
W
o_C
o_C/W
o_C/W
Quantity
3000 units
FDFM2P110 Rev. C4 (W)