FDFM2P110 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Integrated P-Channel PowerTrench MOSFET and Schottky Diode

April 2005
FDFM2P110
Integrated P-Channel PowerTrench^®
MOSFET and Schottky Diode
Features
■ –3.5 A, –20 V R_DS(ON) = 140 mΩ @ V_GS = –4.5 V
R_DS(ON) = 200 mΩ @ V_GS = –2.5 V
■ Low Profile – 0.8mm maximum – in the new package
MicroFET 3x3 mm
Applications
■ DC-DC Converter
General Description
FDFM2P110 combines the exceptional performance of Fairchild’s
PowerTrench MOSFET technology with a very low forward voltage
drop Schottky barrier rectifier in a MicroFET package.
This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance.
Pin 1
1
2
3
Top
MLP 3x3
Bottom
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
V_DSS
V_GSS
I_D
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
V_RRM
I_O
P_D
Schottky Repetitive Peak Reverse Voltage
Schottky Average Forward Current
Power Dissipation (Steady State)
(Note 1a)
(Note 1a)
(Note 1b)
T_J, T_STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R _{θ JA}
R _{θ JA}
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Ratings
–20
±12
–3.5
–10
20
2
2.4
1.2
–55 to +150
60
145
Package Marking and Ordering Information
Device Marking
2P110
Device
FDFM2P110
Reel Size
7"
Tape width
12mm
6
5
4
Units
V
V
A
V
A
W
°C
°C/W
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
1
FDFM2P110 Rev. C2
www.fairchildsemi.com