FDFM2N111 Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – Integrated N-Channel PowerTrench MOSFET and Schottky Diode

August 2005
FDFM2N111
Integrated N-Channel PowerTrench^® MOSFET and Schottky Diode
General Description
FDFM2N111 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in a
MicroFET package.
Applications
„ Standard Buck Converter
Features
This device is designed specifically as a single package
solution for Standard Buck Converter. It features a fast
switching, low gate charge MOSFET with very low on-state
resistance.
„ 4 A, 20 V R_DS(ON) = 100mΩ @ V_GS = 4.5 V
R_DS(ON) = 150mΩ @ V_GS = 2.5 V
„ Low Profile - 0.8 mm maximun - in the new package
MicroFET 3x3 mm
PIN 1
A S/C G
C
D
A¹
S/C 2
6A
5 S/C
G3
4_D
A S/C D
TOP
MLP 3x3
BOTTOM
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GSS
I_D
V_RRM
I_O
P_D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous
-Pulsed
Schottky Repetitive Peak Reverse voltage
Schottky Average Forward Current
Power dissipation (Steady State)
Power dissipation (Steady State)
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
T_J, T_STG Operating and Storage Junction Temperature Range
Ratings
20
±12
4
10
20
2
1.7
0.8
-55 to +150
Units
V
V
A
V
A
W
o_C
Thermal Characteristics
R_θJA
R_θJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
70
(Note 1b)
150
o_C/W
o_C/W
Package Marking and Ordering Information
Device Marking
2N111
Device
FDFM2N111
Reel Size
7inch
Tape Width
12mm
Quantity
3000 units
©2005 Fairchild Semiconductor Corporation
1
FDFM2N111 Rev. C2 (W)