FDFC3N108_07 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel 1.8V Specified PowerTrench MOSFET with Schottky Diode

May 2007
FDFC3N108
tm
N-Channel 1.8V Specified PowerTrench^® MOSFET with Schottky Diode
General Description
Features
This N-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It is combined with a low forward drop Schottky that is
isolated from the MOSFET, providing a compact power
solution for battery power management and DC/DC
converter applications.
Applications
• Battery management/Charger Application
• DC/DC Conversion
• 3 A, 20 V
RDS(ON) = 70 mΩ @ VGS = 4.5 V
RDS(ON) = 95 mΩ @ VGS = 2.5 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
D2
S1
D1
SuperSOT ^TM-6
Pin 1
G2
S2
G1
SuperSOT™-6
A1
S2
G3
MOSFET Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, Tstg
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Schottky Diode Maximum Ratings
VRRM
Repetitive Peak reverse voltage
IO
Average Forward Current
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.108
FDFC3N108
7’’
Ratings
20
±12
3
12
0.96
0.90
0.70
–55 to +150
20
2.0
130
60
Tape width
8mm
6C
5 NC
4D
Units
V
V
A
W
°C
V
A
°C/W
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDFC3N108 Rev C2 (W)