FDFC2P100 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Integrated P-Channel PowerTrench MOSFET and Schottky Diode -20V, -3A, 150mohm

October 2006
FDFC2P100
Integrated P-Channel PowerTrench^® MOSFET and Schottky Diode
-20V, -3A, 150mΩ
Features
General Description
„ Max r_DS(on) = 150mΩ at V_GS = -4.5V, I_D = -3.0A
„ Max r_DS(on) = 200mΩ at V_GS = -2.5V, I_D = -2.2A
„ Low Gate Charge (3.4nC typ)
„ Compact industry standard SuperSOT^TM-6 package
Schottky:
„ V_F < 0.45 V at I_F = 1A
„ RoHS Compliant
The FDFC2P100 combine the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very low
forward voltage drop Schottky barrier rectifier in an SSOT-6
package.
This device is designed specifically as a single package solution
for DC to DC converters. It features a fast switching, low gate
charge MOSFET with very low on-state resistance. Significant
improvement of Thermal Characteristics and Power Dissipation
via replacement of independently connected Schottky with
internal connection of Schottky Diode Cathode pn to P-Channel
PowerTrench MosFET Drain pin.
PIN 1
SuperSOT^TM-6
C/D 4
C/D 5
C/D 6
3G
2S
1A
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DS
V_GS
I_D
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
Power Dissipation
Parameter
V_RRM
I_O
T_J, T_STG
Schotty Repetitive Peak Reverse Voltage
Schotty Average Forward Current
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
Ratings
-20
±12
-3
-6
1.5
0.8
20
1
-55 to +150
Units
V
V
A
W
V
A
°C
R_θJA
R_θJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
87
(Note 1b)
166
°C/W
Device Marking
.100
Device
FDFC2P100
Package
SSOT-6
Reel Size
7”
Tape Width
8mm
Quantity
3000units
©2006 Fairchild Semiconductor Corporation
1
FDFC2P100 Rev.C (W)
www.fairchildsemi.com