 English |
|
|
|
|
|
|
|
| FDD9407_F085 Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – N-Channel Power Trench® MOSFET | |||
| |||
|
FDD9407_F085
N-Channel Power Trench® MOSFET
40V, 100A, 2.0mΩ
Features
 Typ rDS(on) = 1.6mΩ at VGS = 10V, ID = 80A
 Typ Qg(tot) = 86nC at VGS = 10V, ID = 80A
 UIS Capability
 RoHS Compliant
 Qualified to AEC Q101
Applications
 Automotive Engine Control
 Powertrain Management
 Solenoid and Motor Drivers
 Electronic Steering
 Integrated Starter/alternator
 Distributed Power Architectures and VRM
 Primary Switch for 12V Systems
G
S
August 2013
D
D
G
DTO-P-2A5K2
(TO-252)
S
MOSFET Maximum Ratings TJ = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10) (Note 1)
Pulsed Drain Current
EAS
Single Pulse Avalanche Energy
Power Dissipation
PD
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
RθJC
Thermal Resistance Junction to Case
RθJA
Maximum Thermal Resistance Junction to Ambient
TC = 25°C
TC = 25°C
(Note 2)
(Note 3)
Ratings
40
±20
100
See Figure4
171
227
1.52
-55 to + 175
0.66
52
Units
V
V
A
mJ
W
W/oC
oC
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
FDD9407
FDD9407_F085 D-PAK(TO-252)
Reel Size
13â
Tape Width
12mm
Quantity
2500 units
Notes:
1: Current is limited by bondwire configuration.
2: Starting TJ = 25°C, L = 0.08mH, IAS = 64A, VDD = 40V during inductor charging and VDD = 0V during time in avalanche
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface
presented here is
obfatsheeddoraninmpoiunnst.inRgθoJnCais1giuna2rpaandteoefd2boyzdceospigpnerw. hile
RθJAis
determined
by
the
user's
board
design.
The maximum rating
©2013 Fairchild Semiconductor Corporation
1
FDD9407_F085_F085 Rev. C1
www.fairchildsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese