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FDD8N50NZTM Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel UniFETTM II MOSFET
March 2013
FDD8N50NZ
N-Channel UniFETTM II MOSFET
500 V, 6.5 A, 850 m
Features
• RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 3.25 A
• Low Gate Charge (Typ. 14 nC)
• Low Crss (Typ. pF)
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
Description
UniFETTM II MOSFET is Fairchild Semiconductor®’s high
voltage MOSFET family based on advanced planar stripe and
DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
also provides superior switching performance and higher
avalanche energy strength. In addition, internal gate-source ESD
diode allows UniFET II MOSFET to withstand over 2kV HBM
surge stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
G
S
D-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2010 Fairchild Semiconductor Corporation
1
FDD8N50NZ Rev. C0
FDD8N50NZ
500
±25
6.5
3.9
26
287
6.5
9
10
90
0.7
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDD8N50NZ
1.4
62.5
Unit
oC/W
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