FDD8N50NZ Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – Uninterruptible Power Supply

FDD8N50NZ
N-Channel UniFET^TM II MOSFET
500 V, 6.5 A, 850 mΩ
Features
• R_DS(on) = 770 mΩ (Typ.) @ V_GS = 10 V, I_D = 3.25 A
• Low Gate Charge (Typ. 14 nC)
• Low C_rss (Typ. 5 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
November 2013
Description
UniFET^TM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET^TM II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
D
G
G
S
D-PAK
S
MOSFET Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
V_DSS
V_GSS
I_D
I_DM
E_AS
I_AR
E_AR
dv/dt
P_D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Parameter
- Continuous (T_C = 25^oC)
- Continuous (T_C = 100^oC)
- Pulsed
(T_C = 25^oC)
- Derate Above 25^oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
T_J, T_STG
T_L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDD8N50NZTM
500
±25
6.5
3.9
26
287
6.5
9
10
90
0.7
-55 to +150
300
FDD8N50NZTM
1.4
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/^oC
o_C
o_C
Unit
o_C/W
©2010 Fairchild Semiconductor Corporation
1
FDD8N50NZ Rev. C1
www.fairchildsemi.com