FDD8882_08 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET

2
April 2008
FDD8882 / FDU8882
tm
N-Channel PowerTrench^® MOSFET
30V, 55A, 11.5mΩ
Features
! r_DS(ON) = 11.5mΩ, V_GS = 10V, I_D = 35A
! r_DS(ON) = 15mΩ, V_GS = 4.5V, I_D = 35A
! High performance trench technology for extremely low
r_DS(ON)
! Low gate charge
! High power and current handling capability
„ RoHS Complicant
Application
! DC/DC converters
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(ON) and fast switching speed.
D
G
S
D_TO-P_-2A₅K₂
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
©2008 Fairchild Semiconductor Corporation
1
FDD8882/FDU8882 Rev. C
www.fairchildsemi.com