FDD8878 Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

January 2005
FDD8878 / FDU8878
N-Channel PowerTrench^® MOSFET
30V, 40A, 15mΩ
Features
r_DS(ON) = 15mΩ, V_GS = 10V, I_D = 35A
r_DS(ON) = 18.5mΩ, V_GS = 4.5V, I_D = 35A
High performance trench technology for extremely low
r_DS(ON)
Low gate charge
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(ON) and fast switching speed.
High power and current handling capability
Applications
DC/DC converters
D
G
S
D_TO-P_-2A₅K₂
(TO-252)
GDS
I-PAK
(TO-251AA)
D
G
S
©2005 Fairchild Semiconductor Corporation
FDD8878 / FDU8878 Rev. A3
1
www.fairchildsemi.com