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| FDD8874_08 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 30V, 116A, 5.1m ohm | |||
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FDD8874 / FDU8874
N-Channel PowerTrench® MOSFET
30V, 116A, 5.1mâ¦
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(ON) and fast switching speed.
Applications
⢠DC/DC converters
April 2008
tm
Features
⢠rDS(ON) = 5.1mâ¦, VGS = 10V, ID = 35A
⢠rDS(ON) = 6.4mâ¦, VGS = 4.5V, ID = 35A
⢠High performance trench technology for extremely low
rDS(ON)
⢠Low gate charge
⢠High power and current handling capability
⢠RoHS Compliant
D
G
S
DTO-P-2A5K2
(TO-252)
GDS
I-PAK
(TO-251AA)
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V) (Note 1)
Continuous (TC = 25oC, VGS = 4.5V) (Note 1)
Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 52oC/W)
Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area
D
G
S
Ratings
30
±20
116
103
18
Figure 4
240
110
0.73
-55 to 175
1.36
100
52
Units
V
V
A
A
A
A
mJ
W
W/oC
oC
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FDD8874 / FDU8874 Rev. B2
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