FDD8870 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

September 2004
FDD8870 / FDU8870
N-Channel PowerTrench^® MOSFET
30V, 160A, 3.9m Ω
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r_DS(ON) and fast switching speed.
Applications
• DC/DC converters
Features
• r_DS(ON) = 3.9mΩ, V_GS = 10 V, I_D = 35A
• r_DS(ON) = 4.4mΩ, V_GS = 4. 5V, I_D = 35A
• High performance trench technology for extremely low
r_DS(ON)
• Low gate charge
• High power and current handling capability
D
G
S
D_TO-P_-2A₅K₂
(TO-252)
GDS
I-PAK
(TO-251AA)
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
E_AS
P_D
T_J, T _STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V _GS = 10V) (Note 1)
Continuous (T_C = 25^oC, V _GS = 4.5V) (Note 1)
Continuous (T_amb = 25^oC, V_GS = 10 V, with R_θJA = 52^oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25^oC
Operating and Storage Temperature
D
G
S
Ratings
30
±20
160
150
21
Figure 4
690
160
1.07
-55 to 175
Units
V
V
A
A
A
A
mJ
W
W/^oC
o_C
Thermal Characteristics
R_{θ JC}
R_{θ JA}
R_{θ JA}
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in ² copper pad area
0.94
100
52
o_C/W
o_C/W
o_C/W
Package Marking and Ordering Information
Device Marking
FDD8870
FDU8870
Device
FDD8870
FDU8870
Package
TO-252AA
TO-251AA
Reel Size
13”
Tube
Tape Width
12mm
N/A
Quantity
2500 units
75 units
©2004 Fairchild Semiconductor Corporation
FDD8870 / FDU8870 Rev. C